The intensity balance ratio (IBR) tuning mechanism of Nd:GdVO<sub>4</sub> monolithic microchip dual-frequency laser (DFL) is presented. The intensity balanced DFL signals are obtained by precisely controlling the heat sink temperature of the Nd:GdVO<sub>4</sub> crystal. In experiments, the DFL signal with frequency separation at 64 GHz and IBR above 0.99 is realized with the temperature at 47.6 °C. The other balanced intensity distribution can be reached at -0.9 °C before mode hopping. Moreover, utilizing the fluorescence spectrum and the intensity balance points of Nd:GdVO<sub>4</sub> DFL, we obtain the temperature difference between internal and external of Nd:GdVO4 crystal Δ<i>T</i> = 24.0 °C.