HgCdTe and InGaAs material are able to detect near-shortwave infrared extension. The progress of HgCdTe and InGaAs
material and their performances have been discussed. This article mainly presented three aspects of InGaAs negative
electron affinity (NEA) photocathode and image intensifier which are widely used in near-shortwave infrared devices:
the research status, the possible application prospects and the trend.