We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material’s dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.
The mid-infrared (MIR) region is one of the most thriving spectral regions as it contains the vibrational resonances of several molecules of interest, as well as the absorption bands for hot bodies. In this work, we propose a novel dielectric waveguide that confines the light in a nanoscale air gap. This dielectric waveguide is a suitable candidate for on-chip sensing. Detailed dispersion analysis of this 3D waveguide is also provided. The effect of the refractive index change in the gap is studied and shows very high sensitivity and causes significant changes in the modal parameters. We also show that these waveguide modes exhibit plasmonic-like characteristics at the MIR region with controllable plasma frequency, without the inclusion of any metals. This waveguide is also utilized in various on-chip applications with nanoscale confinement at the MIR region.