In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH4/NH3 gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.
Lasers have proven to be unique tools for a highly selective processing of nanomaterials system on the basis of the enhanced laser field, maintaining other sensitive portion in the system untouched. However, in many practical applications, a wide interspacing distribution among nanomaterials and nonlinear laser absorption properties of the nanomaterials in the highly excited nanomaterials states, frequently lead to rather adverse effects in terms of controlled nanomaterials processing. In this study, we will take a few laser nanomaterials processing examples mainly based on the nanowires system including the spin coated metallic nanowires for transparent electrode applications and selective semiconductor nanowires growth from the metallic nanocatalysts, and discuss on the role of the enhanced laser field via the combined theoretical and experimental investigations. Specific aims of properly utilizing the enhanced laser fields are to achieve improved electrical conductance for practical transparent electrode applications, and to facilitate directed growth of semiconductor nanowires at designated sample locations, respectively.