InSb quantum dots of high quality and high density is grown epitaxially by LP-MOCVD technology on GaSb substrate, and some parameters influenced surface pattern of InSb is analyzed such as source flow, phase V/III ratio, growth temperature, pressure in reaction chamber, etc. Experiment obtained a set of optimized parameters of InSb/GaSb quantum dots: 475℃, 200mbar, V/III=1. Under optimized epitaxial parameters, using atomic-like layer growth pattern and connecting In and Sb organic source for four times alternatively can prepare InSb/GaSb quantum dots whose density can be up to 1.69×1010cm-2.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.