Doping Al atom was performed to improve the hardness of GaSe crystal. The Al-doped GaSe (Ga0.49Se0.50: Al 0.15 wt.% and Ga0.49Se0.50: Al 0.35 wt.%) were grown by the modified Bridgman method with crucible rotation technique. Compared with pure crystal, the hardness of Al-doped GaSe crystals is increased markedly (2.6 and 3.2 times). The GaSe: Al crystal hardness increases with Al concentration increase, but high Al concentration leads to the optical quality degradation (Ga0.49Se0.50: Al 0.35 wt.% possesses lower optical quality). Therefore, the selection of appropriate Al-doping level is important for the application of GaSe: Al crystals.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.