Dr. Stuart Young Profile

Dr. Stuart Young

Product Manager at ASML Netherlands BV

SPIE Involvement:

Author

Stuart Young has a PhD in solid state physics from Glasgow University and has been working in ASML since 1997 primarily in product management and other customer facing roles. His product responsibilities have included i-line, KrF, ArF, ArFi lithography tools, Yieldstar metrology tools and most recently EUV systems.

Proceedings Article | 10 April 2024 Presentation

0.33 NA EUV systems for high-volume manufacturing

Peter Klomp, Roderik van Es, Stuart Young, Christophe Smeets

Proceedings Volume PC12953, PC129530O (2024) https://doi.org/10.1117/12.3014165

KEYWORDS: High volume manufacturing, Extreme ultraviolet, Scanners, Sustainability, Semiconducting wafers, Reliability, Overlay metrology, Logic devices, Critical dimension metrology, Control systems

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Proceedings Article | 22 November 2023 Presentation

0.33 NA EUV systems for high volume manufacturing

Pieter Gunter, Emiel Eussen, Christophe Smeets, Roderik van Es, Stuart Young

Proceedings Volume PC12750, PC127500N (2023) https://doi.org/10.1117/12.2692698

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Proceedings Article | 28 April 2023 Presentation + Paper

0.33 NA EUV systems for high volume manufacturing

Christophe Smeets, Nico Benders, Frank Bornebroek, Joe Carbone, Roderik van Es, Arthur Minnaert, Guido Salmaso, Stuart Young

Proceedings Volume 12494, 1249406 (2023) https://doi.org/10.1117/12.2658046

KEYWORDS: Extreme ultraviolet, High volume manufacturing, Semiconducting wafers, Carbon, Wavefront errors, Wavefront aberrations, Semiconductors, Scanners

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Proceedings Article | 8 March 2016 Paper

Improving focus performance at litho using diffraction-based focus metrology, novel calibration methods, interface, and control loop

Kaustuve Bhattacharyya, Jiarui Hu, K. H. Chen, Brian Lee, C. M. Ke, Desmond Ngo, Benny Gosali, Vincent Huang, Ward Tu, Marc Noot, Maryana Escalante Marun, Christian Leewis, Carlo Luijten, Martijn Van Veen, Francois Furthner, Stuart Young, Y. L. Chen, Frankie Tsai, C. H. Liao, Robin Tijssen, Frank Staals

Proceedings Volume 9778, 977829 (2016) https://doi.org/10.1117/12.2220373

KEYWORDS: Metrology, Calibration, Scanners, Process control, Interfaces, Optical lithography, Semiconducting wafers, Photoresist materials, Finite element methods, Inspection, Data modeling, Diffraction

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Proceedings Article | 19 March 2015 Paper

Intra-field patterning control using high-speed and small-target optical metrology of CD and focus

Hugo Cramer, Stefan Petra, Bastiaan Onne Fagginger Auer, Henk-Jan Smilde, Steven Welch, Baukje Wisse, Stefan Kruijswijk, Frank Staals, Christian Leewis, Paul Hinnen, Stuart Young, Arie den Boef, Bart Segers, Maryana Escalante Marun, Wei Guo

Proceedings Volume 9424, 94241F (2015) https://doi.org/10.1117/12.2085957

KEYWORDS: Semiconducting wafers, Metrology, Etching, Critical dimension metrology, Scanners, Scatterometry, Optical lithography, Optical metrology, Computer simulations, Overlay metrology

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Proceedings Article | 16 April 2012 Paper

NXE:3100 full wafer imaging performance and budget verification

Friso Wittebrood, Jo Finders, Eelco van Setten, Mircea Dusa, Mark Eurlings, Kees Feenstra, Natalia Davydova, Thijs Hollink, Koen van Ingen Schenau, Mark O'Mahony, Stuart Young

Proceedings Volume 8352, 835205 (2012) https://doi.org/10.1117/12.918495

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Imaging systems, Reticles, Extreme ultraviolet, Electroluminescence, Critical dimension metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 23 March 2012 Paper

From performance validation to volume introduction of ASML's NXE platform

Hans Meiling, Martin Lowisch, David Ockwell, Judon Stoeldraijer, Ron Kool, Wim de Boeij, Frank Bornebroek, Eelco van Setten, Ivo de Jong, Peter Kűrz, Stuart Young, Christian Wagner, Noreen Harned, Rudy Peeters, Henk Meijer

Proceedings Volume 8322, 83221G (2012) https://doi.org/10.1117/12.916971

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Extreme ultraviolet, Scanners, Mirrors, Photomasks, Particles, Overlay metrology, Line width roughness

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Proceedings Article | 8 April 2011 Paper

Deep ultraviolet out-of-band contribution in extreme ultraviolet lithography: predictions and experiments

Oliver Natt, Christoph Zaczek, Stuart Young, Kees Feenstra, Mark Eurlings, Theodore Fedynyshyn, Peter Huber, Yue Peng, Eric Hendrickx, Gian Lorusso, Paul Graeupner, Cemil Kaya, Natalia Davydova

Proceedings Volume 7969, 79692O (2011) https://doi.org/10.1117/12.879381

KEYWORDS: Deep ultraviolet, Extreme ultraviolet, Photomasks, Aluminum, Reflectivity, Extreme ultraviolet lithography, Semiconducting wafers, Plasma, Photoresist materials, Data modeling

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Extreme ultraviolet lithography (EUVL) sources emit a broad spectrum of wavelengths ranging from EUV to DUV and beyond. If the deep ultraviolet (DUV) reaches the wafer it will affect imaging performance by exposing the photoresist. Hence it is critical to determine the amount of DUV out of band (OoB) present in a EUVL tool, as well as its effect on the printed features on the wafer. In this study we investigate the effect of DUV OoB in EUVL. A model is developed in order to be able to quantify the DUV/EUV ratio at wafer level and all the required input parameters are estimated in the range from 140 to 400nm, as well as for the EUV at 13.5nm. The transmission of the optical system was estimated based on the optical design and reflectivity measurements of the mirrors. The mask reflectivity for multilayer (ML) and absorber was measured at wavelengths down to 140 nm and for EUV. The sensitivity to EUV and DUV for a variety of resist platforms was measured at 13.5 nm, 157 nm, 193 nm, 248 nm and 365 nm. The source spectra were also measured. By using these inputs, it was possible to estimate the DUV/EUV ratio for two different ASML tool configurations, the EUV Alpha Demo Tool and the NXE:3100. Both NXE:3100 with LPP (laser produced plasma) source and Alpha Demo Tool with DPP (discharge produced plasma) source show less than 1% DUV/EUV ratio in resist. The modeling predictions were compared to experimental results. A methodology is introduced to measure the DUV/EUV ratio at wafer level in situ. With this aim, an aluminum coated mask was fabricated and its reflectivity was qualified in both EUV and DUV wavelength range. By comparing the dose to clear exposures of a reflective blank and of the aluminum mask, it is possible to quantify the DUV/EUV ratio. The experimental results are in order of magnitude agreement with modeling predictions. The proposed experimental approach can be used to benchmark the DUV sensitivity of different resist platforms and may be used to monitor DUV OoB.

Proceedings Article | 7 April 2011 Paper

EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100

Judon Stoeldraijer, Ivo de Jong, Leon Levasier, Hans Meiling, David Ockwell, Rudy Peeters, Jose Bacelar, Martin Lowisch, Eelco van Setten, Erik Loopstra, Stef Hendriks, Noreen Harned, Ron Kool, Christian Wagner, Peter Kuerz, Stuart Young, John Zimmerman, Mark van de Kerkhof

Proceedings Volume 7969, 79691F (2011) https://doi.org/10.1117/12.878603

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Overlay metrology, Optical proximity correction, Manufacturing, Extreme ultraviolet, Contamination, High volume manufacturing, Optics manufacturing

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Proceedings Article | 4 December 2008 Paper

Lithography performance and simulation accuracy at different polarization states for sub 40nm node

Stuart Young, Khalid Elbattay, Sung-Goo Hong, Ho-young Kang, Young-Hong Min, Gratiela Isai, Youn-Tak Park, Ki-Yeop Park, Seung-Chul Oh, Peter van Oorschot

Proceedings Volume 7140, 71403N (2008) https://doi.org/10.1117/12.804732

KEYWORDS: Polarization, Nanoimprint lithography, Photomasks, 3D image processing, 3D modeling, Chromium, 3D displays, Lithography, Computer simulations, Device simulation

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