Dr. Tomohiro Nishitani
at Nagoya Univ
SPIE Involvement:
Author
Publications (1)

PROCEEDINGS ARTICLE | March 13, 2015
Proc. SPIE. 9363, Gallium Nitride Materials and Devices X
KEYWORDS: Semiconductors, Electron beams, Gallium arsenide, Quantum efficiency, Gallium nitride, Adsorption, Indium gallium nitride, Cesium, P-type semiconductors, Protactinium

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