We propose a terahertz metalens based on Huygens’ metasurface which can realize the focused field enhancement compared with the single-layered metasurface. The metalens consists of two-layered well-arranged metallic C-shaped split-ring resonators array separated with the dielectric layer. After investigating the relationship between the transmission characteristics and the geometrical parameters of the metasurface, we demonstrate that the Huygens’ metasurface can efficiently enhance the transmission amplitude while inducing the phase gradient within the supercell. Due to higher transmission amplitude of the Huygens’ metasurface, the electric field of the focus is enhanced 117% at 0.8 THz. Our results may offer a new avenue to design efficient metalens, which is promising in developing metasurface-based integrated devices for the terahertz imaging.
In this work, a five-band metamaterial absorber (MMA) for temperature sensing application in terahertz region is analyzed. The MMA is composed of three layers. The bottom layer is the metallic film, the middle dielectric layer is the indium antimonide (InSb) and the top layer is the metallic pattern, in which five resonance peaks are generated. With utilizing the dielectric thermo sensitive property of InSb, the resonant absorption is tunable by varying temperature. The electric current on the MMA is investigated to better understand the physical mechanism of the resonances, revealing the resonances attributed to the high-order magnetic resonances. The multi-band absorber is insensitive to the polarization angle, and be with ultrathin thickness of structure. This design of the MMA provides a new approach for electromagnetic stealth, sensing and imaging.
We present thermal control of electromagnetically induced transparency (EIT) by actively modulating the dark mode in terahertz (THz) metamaterials, including a cut wire and a split-ring resonator (SRR). By integrating indium antimonide (InSb) into the SRR and increasing the temperature, the active modulation of EIT is realized. The coupling mechanism is numerically analyzed through the coupled oscillator model, and the result of fitting the EIT intensity agrees well with the simulation results when the temperature changes from 200 to 240 K. By analyzing the electric field distribution, the physical mechanism is the change in the damping rate of the dark mode resonator due to the increase in InSb temperature. Our work has practical significance in designing tunable THz functional devices.
In this paper, we present a novel design of electro-optic modulator and optical switching device, based on current integrated optics technique. The advantages of our optical switching device are broadband of input light wavelength, robustness against varying device length and operation voltages, with reference to previous design. Conforming to our results of previous paper [Huang et al, phys. lett. a, 90, 053837], the coupling of the waveguides has a hyperbolic-secant shape. while detuning has a sign flip at maximum coupling, we called it as with a sign flip of phase mismatch model. The a sign flip of phase mismatch model can produce complete robust population transfer. In this paper, we enhance this device to switch light intensity controllable, by tuning external electric field based on electro-optic effect.