In advanced technology nodes, layout regularity has become a mandatory prerequisite to create robust designs less sensitive to variations in manufacturing process in order to improve yield and minimizing electrical variability. In this paper we describe a method for designing regular full custom layouts based on design and process co-optimization. The method includes various design rule checks that can be used on-the-fly during leaf-cell layout development. We extract a Layout Regularity Index (LRI) from the layouts based on the jogs, alignments and pitches used in the design for any given metal layer. Regularity Index of a layout is the direct indicator of manufacturing yield and is used to compare the relative health of different layout blocks in terms of process friendliness. The method has been deployed for 28nm and 40nm technology nodes for Memory IP and is being extended to other IPs (IO, standard-cell). We have quantified the gain of layout regularity with the deployed method on printability and electrical characteristics by process-variation (PV) band simulation analysis and have achieved up-to 5nm reduction in PV band.