A novel fabrication technique using GaN-on-Si epitaxial lateral overgrowth for 100 μm cavity GaN-based edge emitting laser diodes

Yoshinobu Kawaguchi; Kentaro Murakawa; Motohisa Usagawa; Akiko Komoda; Mizuki Tonomura; Takeshi Yokoyama; Yuuta Aoki; Kazuma Takeuchi; Takeshi Kamikawa

doi:10.1117/12.2668439

21 March 2023 A novel fabrication technique using GaN-on-Si epitaxial lateral overgrowth for 100 μm cavity GaN-based edge emitting laser diodes

Yoshinobu Kawaguchi, Kentaro Murakawa, Motohisa Usagawa, Akiko Komoda, Mizuki Tonomura, Takeshi Yokoyama, Yuuta Aoki, Kazuma Takeuchi, Takeshi Kamikawa

Author Affiliations +

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2668439
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

This conference presentation was submitted for Photonics West, 2023.

Conference Presentation

Citation Download Citation

Yoshinobu Kawaguchi, Kentaro Murakawa, Motohisa Usagawa, Akiko Komoda, Mizuki Tonomura, Takeshi Yokoyama, Yuuta Aoki, Kazuma Takeuchi, and Takeshi Kamikawa "A novel fabrication technique using GaN-on-Si epitaxial lateral overgrowth for 100 μm cavity GaN-based edge emitting laser diodes", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2668439

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