Presentation
5 March 2022 Towards high-efficiency and low-cost epitaxial CIGSu/Si tandem solar cells
Olivier Durand, Eugène Bertin, Nicolas Barreau, Eric Gautron, Antoine Létoublon, Charles Cornet, Maud Jullien, Alexandre Crossay, Polyxeni Tsoulka, Daniel Lincot
Author Affiliations +
Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC120020Q (2022) https://doi.org/10.1117/12.2619151
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We propose to explore tandem junctions associating single crystalline silicon bottom cell (Eg = 1.12 eV) and wide bandgap (1.7 eV) CuIn0.75Ga0.25S2 (pure-sulfide CIGSu) top cell, using GaP intermediate layer. Our purpose is to grow CIGSu films under epitaxial conditions on GaP/Si(001) to improve the top cell efficiency, thanks to a reduction of the structural defects density detrimental for the cell performance, so that CIGSu/Si tandem cells can emerge as cost competitive for the next generation of PV modules. Record efficiency on standard AZO/ZnMgO/CdS/CIGSu/Mo/Glass solar cell and epitaxy of CIGSsu on GaP/Si are demonstrated.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Olivier Durand, Eugène Bertin, Nicolas Barreau, Eric Gautron, Antoine Létoublon, Charles Cornet, Maud Jullien, Alexandre Crossay, Polyxeni Tsoulka, and Daniel Lincot "Towards high-efficiency and low-cost epitaxial CIGSu/Si tandem solar cells", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020Q (5 March 2022); https://doi.org/10.1117/12.2619151
Advertisement
Advertisement
KEYWORDS
Tandem solar cells

Silicon

Solar cells

Copper indium gallium selenide

Crystals

Deposition processes

Electron microscopy

Back to Top