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9 March 2024 Effect of threading dislocations on the diffusion of implanted donors and acceptors in gallium nitride
Michal Bockowski, Kacper Sierakowski, Piotr Jaroszynski, Malgorzata Iwinska
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860F (2024) https://doi.org/10.1117/12.3000147
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Ion implantation (I/I) is a key technology for preparing semiconductor devices. In the case of GaN, I/I is still under development. The formation of n-type and p-type regions remains a major challenge. In this paper, we will focus on analyzing the effect of structural quality, represented by the threading dislocation density (TDD), on the diffusion of implanted silicon (Si; donor) and magnesium (Mg; acceptor) in GaN. Four (0001) GaN substrates with different TDD, varied from 103 cm-2 to 1010 cm-2 will be used. Substrates with different TDD will be implanted with Si and Mg. The samples will then be annealed at a few temperatures at the same high nitrogen pressure and time. Analysis of the diffusion profiles of the implanted dopants will allow, using the finite element analysis (FEA), to determine D and the activation energies for GaN as a function of TDD.
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Michal Bockowski, Kacper Sierakowski, Piotr Jaroszynski, and Malgorzata Iwinska "Effect of threading dislocations on the diffusion of implanted donors and acceptors in gallium nitride", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860F (9 March 2024); https://doi.org/10.1117/12.3000147
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KEYWORDS
Gallium nitride
Diffusion
Silicon
Magnesium
Crystals
Finite element methods
P-type semiconductors
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