Photovoltaic Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te Technology For Elevated Temperature Focal Planes

P. LoVecchio; A. K. Sood

doi:10.1117/12.959302

18 February 1981 Photovoltaic Hg_1-xCd_xTe Technology For Elevated Temperature Focal Planes

P. LoVecchio, A. K. Sood

Proceedings Volume 0244, Mosaic Focal Plane Methodologies I; (1981) https://doi.org/10.1117/12.959302
Event: 24th Annual Technical Symposium, 1980, San Diego, United States

Abstract

Recent advances in Hg_l-xCd_xTe photodiode technology have resulted in increased detector sensitivity at elevated temperatures over the spectral region from 1-20 μm. Short wavelength photodiodes sensitive to 1-3 pm radiation have room temperature peak detectivities, Dλ, between 4 x 10¹¹ and 8 x 10⁸ cm Hz^1/2/W, dependent on peak wavelength, A. Medium wavip 2length photodiodes sensitive to 3-5 im radiation have peak detectivities of 1 x 1011 and 1 x 1012 cm Hz1//W at temperatures of 193 K and 130 K, respectively. Long wavelength photodiodes sensitive to 12 μm radiation have peak detectivities of 5 x 10¹⁰ cm Hz /W at 65 K, and 5 x 10¹¹ cm Hz ^½/W at 10 K.

Citation Download Citation

P. LoVecchio and A. K. Sood "Photovoltaic Hg_1-xCd_xTe Technology For Elevated Temperature Focal Planes", Proc. SPIE 0244, Mosaic Focal Plane Methodologies I, (18 February 1981); https://doi.org/10.1117/12.959302

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