Paper
29 July 1981 Application Of Metalorganic Chemical Vapor Deposition To Lasers For Integrated Optoelectronics
P. D. Dapkus
Author Affiliations +
Proceedings Volume 0269, Integrated Optics I; (1981) https://doi.org/10.1117/12.959945
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
The fiber optics technology based on discrete components is rapidly maturing. Sources are commercially available at the 0.82 - 0.85 μm and 1.3 μm wavelength windows in fiber loss characteristics. The detector technology at present is dominated by Si and Ge detectors owing to their advanced state of technological development. While systems being installed are almost exclusively based on GaAlAs/GaAs sources and Si detectors, there is an inevitable trend to longer wavelengths for long distance systems owing to superior fiber loss and dispersion characteristics. These applications dominate the research interests of companies involved in telecommunications.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. D. Dapkus "Application Of Metalorganic Chemical Vapor Deposition To Lasers For Integrated Optoelectronics", Proc. SPIE 0269, Integrated Optics I, (29 July 1981); https://doi.org/10.1117/12.959945
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KEYWORDS
Metalorganic chemical vapor deposition

Gallium arsenide

Optoelectronics

Sensors

Integrated circuits

Laser applications

Laser damage threshold

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