Damage and rapid thermal annealing of In implanted Hg[sub]0.3[/sub][sup]Cd[/sup]0.7[sup]Te[/sup]

C Uzan; R Kalish; V Richter; T Nguyen Duy

doi:10.1117/12.938542

22 November 1986 Damage and rapid thermal annealing of In implanted Hg_0.3^Cd0.7^Te

C Uzan, R Kalish, V Richter, T Nguyen Duy

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938542
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

Rutherford backscattering analysis was used to study the damage due to In implantation into Hg_{l_x}Cd_xTe (x = 0.7). We show that the defects can be removed successfuly by rapid thermal annealing (T = 440°C, t = 10s).

Citation Download Citation

C Uzan, R Kalish, V Richter, and T Nguyen Duy "Damage and rapid thermal annealing of In implanted Hg_0.3^Cd0.7^Te", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938542

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