On-Wafer Testing of GainAsP/InP Mass-Transported Lasers

J. N. Walpole; Z. L. Liau

doi:10.1117/12.937700

14 January 1987 On-Wafer Testing of GainAsP/InP Mass-Transported Lasers

J. N. Walpole, Z. L. Liau

Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937700
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

We review techniques which have been developed for on-wafer testing of diode lasers. We have previously described the fabrication of mass-transported buried-heterostructure lasers in which the laser cavity is produced within a mesa structure in such a way that electrical isolation between laser mesas on the wafer is essentially built-in. Bars of lasers in linear edge-emitting arrays can be cleaved from such a wafer. We have carried out cw electrical and optical characterization of each laser (up to about 50 devices in a row) in these bars without bonding to heat-sinks. Similarly we have evaluated individual elements of two-dimensional arrays of surface-emitting lasers which are fabricated using etched and mass-transported cavity mirrors with monolithically integrated beam deflectors. This kind of on-wafer testing permits selection of suitable individual devices to be diced and bonded or selection of segments of wafers for optimum array performance. It also makes possible the correlation of device performance with position on the wafer which is useful in diagnosing problems in wafer growth and fabrication.

Citation Download Citation

J. N. Walpole and Z. L. Liau "On-Wafer Testing of GainAsP/InP Mass-Transported Lasers", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); https://doi.org/10.1117/12.937700

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