Paper
21 August 1987 A Simplified Analytic Model For Double Injection In Amorphous Silicon Alloys
M. Silver, E. Snow, V. Cannella, J. McGill, Z. Yaniv, David Adler
Author Affiliations +
Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940170
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
A simplified analytical model that describes the forward-bias current flow in recombination-limited p/i/n structures is described and applied to amorphous silicon alloys. The results obtained from this model reproduce those from more exact computer simulations. The analytic solution, however, elucidates the general form of the dependence of the current upon such parameters as the density of states and the recombination kinetics. We show that the current depends primarily on the ratio of the free-carrier mobilities to the recombination and trapping rate constants and on the energy dependence of the density of states.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Silver, E. Snow, V. Cannella, J. McGill, Z. Yaniv, and David Adler "A Simplified Analytic Model For Double Injection In Amorphous Silicon Alloys", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940170
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KEYWORDS
Electrons

Physics

Amorphous silicon

Amorphous semiconductors

Computer simulations

Electroluminescence

Radon

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