Effects Of Picosecond-Laser-Driven Shock Waves On The Photoluminescence From Semiconductors

X. Z. Lu; R. Garuthara; S. Lee; R. R. Alfano

doi:10.1117/12.947210

22 August 1988 Effects Of Picosecond-Laser-Driven Shock Waves On The Photoluminescence From Semiconductors

X. Z. Lu, R. Garuthara, S. Lee, R. R. Alfano

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947210
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

A pump-and-probe technique was used to investigate the shock wave effects on the photoluminescence spectra from GaSe and GaAs semiconductors. Shock waves were generated by focusing intense picosecond laser pulses of the pump beam at 1.064 μm onto an aluminum foil attached to the sample. Under laser driven shock loading, a 24 nm spectral red-shift of the spontaneous emission peak which corresponds to 14 kbar shock pressure was detected in GaSe. Significant line broadening is attributed to the shock-wave-induced collision mechanism. The observed larger red-shift of 36 nm and the intensity decrease of the stimulated emission were explained by the shock-wave-induced band gap shrinkage through the gain reduction mechanism based on exciton-exciton scattering process. In GaAs, the photoluminescence peak was observed to blue-shift and split into two components, corresponding to the transitions from the r6 conduction band to the valence heavy-hole- and light-hole-subbands due to symmetry breaking by the uniaxial shock compression along the [001] direction.

Citation Download Citation

X. Z. Lu, R. Garuthara, S. Lee, and R. R. Alfano "Effects Of Picosecond-Laser-Driven Shock Waves On The Photoluminescence From Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947210

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