Resonant-Tunneling Transistors Using InGaAs-Based Materials

Naoki Yokoyama; Hiroaki Ohnishi; Toshiroh Futatsugi; Shunichi Muto; Toshihiko Mori; Kenichi Imamura; Akihiro Shibatomi

doi:10.1117/12.947278

18 August 1988 Resonant-Tunneling Transistors Using InGaAs-Based Materials

Naoki Yokoyama, Hiroaki Ohnishi, Toshiroh Futatsugi, Shunichi Muto, Toshihiko Mori, Kenichi Imamura, Akihiro Shibatomi

Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947278
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

This paper reviews our current research activities into resonant-tunneling hot electron transistors (RHETs) and resonant-tunneling bipolar transistors (RBTs) and describes our recent advances in these device technologies using InGaAs-based materials. The InGaAs-based RHET's common-emitter current gain at 77K is typically 17 (with a maximum of 25), which is about four times greater than that of a GaAs-based RHET. The collector current peak-to-valley ratio reaches 19.3 (with a maximum of 21.7). This is eight times that of the GaAs-based RHET. The InGaAs-based RBTs have been operated at room temperature with a current gain of 26 and a collector current peak-to-valley ratio of 2.3. The scattering parameters of the InGaAs-based RBT have been measured in a frequency range from 0.2 to 20.2 GHz. The cutoff frequency fT is measured as 12.4 GHz, indicating an emitter-to-collector delay of 12.8 ps. The delay due to the resonant-tunneling barrier used for this RBT is estimated to be 1.4 ps using an equivalent RBT circuit analysis.

Citation Download Citation

Naoki Yokoyama, Hiroaki Ohnishi, Toshiroh Futatsugi, Shunichi Muto, Toshihiko Mori, Kenichi Imamura, and Akihiro Shibatomi "Resonant-Tunneling Transistors Using InGaAs-Based Materials", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947278

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