Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

M. De Biasio; M. Kraft; M. Schultz; B. Goller; D. Sternig; R. Esteve; M. Roesner

doi:10.1117/12.2259930

3 May 2017 Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

M. De Biasio, M. Kraft, M. Schultz, B. Goller, D. Sternig, R. Esteve, M. Roesner

Author Affiliations +

Proceedings Volume 10210, Next-Generation Spectroscopic Technologies X; 1021014 (2017) https://doi.org/10.1117/12.2259930
Event: SPIE Commercial + Scientific Sensing and Imaging, 2017, Anaheim, CA, United States

Abstract

Silicon carbide (SiC) is a wide band-gap semi-conductor material that is used increasingly for high voltage power devices, since it has a higher breakdown field strength and better thermal conductivity than silicon. However, in particular its hardness makes wafer processing difficult and many standard semi-conductor processes have to be specially adapted. We measure the effects of (i) mechanical processing (i.e. grinding of the backside) and (ii) chemical and thermal processing (i.e. doping and annealing), using confocal microscopy to measure the surface roughness of ground wafers and micro-Raman spectroscopy to measure the stresses induced in the wafers by grinding. 4H-SiC wafers with different dopings were studied before and after annealing, using depth-resolved micro-Raman spectroscopy to observe how doping and annealing affect: i.) the damage and stresses induced on the crystalline structure of the samples and ii.) the concentration of free electrical carriers. Our results show that mechanical, chemical and thermal processing techniques have effects on this semiconductor material that can be observed and characterized using confocal microscopy and high resolution micro Raman spectroscopy.

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M. De Biasio, M. Kraft, M. Schultz, B. Goller, D. Sternig, R. Esteve, and M. Roesner "Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing", Proc. SPIE 10210, Next-Generation Spectroscopic Technologies X, 1021014 (3 May 2017); https://doi.org/10.1117/12.2259930

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