Paper
10 April 1989 Laser Induced Synthesis Of Crystallised Cu-Te Semiconducting Compounds
Francoise Hanus, Lucien D. Laude
Author Affiliations +
Proceedings Volume 1022, Laser Assisted Processing; (1989) https://doi.org/10.1117/12.950115
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
Laser-synthesis of thin film compound semiconductors has been demonstrated to provide a very efficient way to produce high quality single phase materials for opto-electronic applications. Three semiconducting compounds may be formed in the Cu-Te system: CuTe, Cu7Te5 and Cu2Te with specific optical properties. In this work, these phases have all been laser-synthesized from a sandwich film containing a stack of elemental layers. The overall atomic proportion is closest to the aimed stoichiometry. Upon irradiation and depending on laser fluence, the compound is formed at and above a power density threshold corresponding to the abrupt melting of the film.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francoise Hanus and Lucien D. Laude "Laser Induced Synthesis Of Crystallised Cu-Te Semiconducting Compounds", Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); https://doi.org/10.1117/12.950115
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Cited by 3 scholarly publications.
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KEYWORDS
Crystals

Copper

Tellurium

Laser crystals

Laser processing

Semiconductors

Thin films

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