Numerical modeling of microwave switchers with subpicosecond time delay

B. Konoplev; E. Ryndin

doi:10.1117/12.2266551

30 December 2016 Numerical modeling of microwave switchers with subpicosecond time delay

B. Konoplev, E. Ryndin

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 1022410 (2016) https://doi.org/10.1117/12.2266551
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

In this article the layout and structure of the microwave switcher based on the managed electron density maximum rearrangement in multi-contacts functionally integrated active region are considered. The basis of the microwave switcher is a normally opened high electron mobility transistor structure (HEMT) with multiple Schottky gates and the corresponding number of switching ohmic contacts. In this research two-dimensional finite-difference physical and topological model of the considered microwave switchers is proposed. The distinctive features of the proposed model are combination of two different sets of variables and explicit first-order upwind discretization scheme for the normalized continuity equation. The obtained results of numerical modeling are discussed.

Citation Download Citation

B. Konoplev and E. Ryndin "Numerical modeling of microwave switchers with subpicosecond time delay", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022410 (30 December 2016); https://doi.org/10.1117/12.2266551

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