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7 September 2018 Design and performance study of a DC–DC ZETA converter with wide bandgap power devices
Ali M. S. Al-bayati, Salah S. Alharbi, Saleh S. Alharbi, Mohammad Matin
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Proceedings Volume 10754, Wide Bandgap Power and Energy Devices and Applications III; 107540I (2018) https://doi.org/10.1117/12.2322915
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States
Abstract
The rapid growth in renewable energy based electric power generation continuously pushes for the need of high performance power conversion systems. This paper mainly focuses on the design and performance study of a DC– DC ZETA converter using wide bandgap power devices. The converter is designed based on a SiC MOSFET/SiC Schottky diode, and its performance is compared with a Si IGBT/SiC Schottky diode based converter. The switching characteristics of the SiC MOSFET and Si IGBT power devices within the converter are studied and compared. A comprehensive evaluation of the total power loss and overall efficiency of the converter is analyzed and reported. The results indicate that the converter with the SiC MOSFET/SiC Schottky diode has great potential to work efficiently under different operating conditions.
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Ali M. S. Al-bayati, Salah S. Alharbi, Saleh S. Alharbi, and Mohammad Matin "Design and performance study of a DC–DC ZETA converter with wide bandgap power devices", Proc. SPIE 10754, Wide Bandgap Power and Energy Devices and Applications III, 107540I (7 September 2018); https://doi.org/10.1117/12.2322915
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KEYWORDS
Silicon carbide
Silicon
Diodes
Field effect transistors
Switching
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