Paper
29 March 2019 Laser-induced periodic surface structure in silicon wafer irradiated by continuous laser
Author Affiliations +
Proceedings Volume 11046, Fifth International Symposium on Laser Interaction with Matter; 1104635 (2019) https://doi.org/10.1117/12.2524103
Event: Fifth International Symposium on Laser Interaction with Matter, 2018, Changsha, China
Abstract
Laser-induced periodic surface structure (LIPSS) is a universal phenomenon which occurs for both continuous laser and pulsed laser. Recently, most studies are focus on LIPSS irradiated by fs laser. However, LIPSS irradiated by continuous laser still need to be carefully studied. Here, We study LIPSS in silicon wafer irradiated by continuous laser for different duration time and power. For the same power, we can observe the evolution process of LIPSS for different time. It is surprising that the evolution process of LIPSS seems to be layered, which occurs for different power. The inner layer occurs at first, then the outer layer occurs. Our study can be used to control the formation of LIPSS.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X. Zhang, J. Lu, H. C. Zhang, Z. W. Li, W. Y. Wu, Y. C. Gong, and Y. T. Yang "Laser-induced periodic surface structure in silicon wafer irradiated by continuous laser", Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 1104635 (29 March 2019); https://doi.org/10.1117/12.2524103
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KEYWORDS
Silicon

Semiconductor lasers

Laser applications

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