Paper
8 July 2019 Employing Ni-Cr co-doping to prepare low phase transition temperature VO2 film
Qicong He, Dongping Zhang, Ying Huang, Yu Yang, Huan Guan, Jingcheng Jin, Ping Fan
Author Affiliations +
Proceedings Volume 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019); 110640G (2019) https://doi.org/10.1117/12.2541404
Event: Pacific Rim Laser Damage 2019 and Thin Film Physics and Applications 2019, 2019, Qingdao, China
Abstract
A new doping approach of preparing VO2 film was proposed to significantly tune the transition phase temperature. The heavy Ni-Cr-codoped VO2 film ultra-thin layer was deposited on the pure VO2 film by reactive pulsed magnetron sputtering on the Si substrate followed with annealing. The microstructure, optical and phase transition performance of VO2 films were characterized via X-ray diffraction, UV/VIS/NIR spectrophotometer and thin film phase transition measurement system, respectively. The result indicates that the transition phase temperature of VO2 film can be reduced from 53 ℃ to 30 ℃ by easily controlling different doping time.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qicong He, Dongping Zhang, Ying Huang, Yu Yang, Huan Guan, Jingcheng Jin, and Ping Fan "Employing Ni-Cr co-doping to prepare low phase transition temperature VO2 film", Proc. SPIE 11064, Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), 110640G (8 July 2019); https://doi.org/10.1117/12.2541404
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KEYWORDS
Doping

Thin films

Transmittance

Annealing

Infrared radiation

Phase shift keying

Sputter deposition

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