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9 March 2020 Scalable growth of atomically thin BN: an ultra-wide band gap material (Conference Presentation)
Michael Snure, Gene Siegel, Stefan Badescu
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Proceedings Volume 11302, Light-Emitting Devices, Materials, and Applications XXIV; 113020K (2020) https://doi.org/10.1117/12.2537408
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In the expanding field of 2D, hBN serves as the 2D insulator finding application as a non-interacting substrate, passivation layer, and gate dielectric for use with 2D semiconductors, as well as, for deep UV emitters and single-photon sources. This has driven research into synthesis methods for controlled growth form mono to many layer thick films. Here we present on growth of mono to few layer hBN by metal organic vapor phase epitaxy on various substrates from sapphire to transition metals. Models describing growth chemistry for these various substrates are described. The effects growth conditions on properties will also be discussed.
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Michael Snure, Gene Siegel, and Stefan Badescu "Scalable growth of atomically thin BN: an ultra-wide band gap material (Conference Presentation)", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020K (9 March 2020); https://doi.org/10.1117/12.2537408
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KEYWORDS
Chemistry
Metals
Process control
Control systems
Deep ultraviolet
Dielectrics
Sapphire
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