MIS Structures On InP Using Oxide Deposited Near 100Ã‚Â°C

K. Vaccaro; B. R. Bennett; J. P. Lorenzo; A. Davis; H. G. Lipson

doi:10.1117/12.962006

28 November 1989 MIS Structures On InP Using Oxide Deposited Near 100°C

K. Vaccaro, B. R. Bennett, J. P. Lorenzo, A. Davis, H. G. Lipson

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962006
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

We have deposited silicon dioxide by chemical vapor deposition at pressures of 2 to 12 torr and substrate temperatures as low as 75°C. Properties of the films on n-type InP substrates are reported. Hysteresis of less than 0.1 volts is observed in capacitance-voltage curves for the lowest-temperature depositions. For 100°C depositions surface state densities are in the low 10¹¹ cm-2eV-1 range. Changes in the dielectric properties are observed as deposition temperature drops from 300 to 75°C. Relative dielectric constant increases from 4 to 7 and resistivity decreases from 10¹⁵ to 10¹² ohm-cm. Electrical properties can be further improved by both RTA and conventional furnace annealing.

Citation Download Citation

K. Vaccaro, B. R. Bennett, J. P. Lorenzo, A. Davis, and H. G. Lipson "MIS Structures On InP Using Oxide Deposited Near 100°C", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962006

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