Passivation Of InP Using A Surface Science Approach : THE Al2O3/As//InP CASE

M. Gendry; R. Blanchet; G. Hollinger; C. Santinelli; R. Skheyta; P. Viktorovitch

doi:10.1117/12.962012

28 November 1989 Passivation Of InP Using A Surface Science Approach: THE Al₂0₃/As//InP Case

M. Gendry, R. Blanchet, G. Hollinger, C. Santinelli, R. Skheyta, P. Viktorovitch

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962012
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

A new approach is presented for the development of a MISFET technology. It is applied to the optimization of A1203/InP structures prepared by the deposition of evaporated A1203 on arsenic stabilized InP surfaces. MBE and surface science techniques (XPS and RHEED) are used to control step by step the elaboration of the structures and to describe the microscopic properties of the interfaces. The optimization of the elaboration process is based on correlations between physico-chemical properties and MIS electrical properties. It is shown that an interfacial oxide buffer layer can favor chemical matching between A1203 and InP.

Citation Download Citation

M. Gendry, R. Blanchet, G. Hollinger, C. Santinelli, R. Skheyta, and P. Viktorovitch "Passivation Of InP Using A Surface Science Approach: THE Al₂0₃/As//InP Case", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962012

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