Presentation
20 August 2020 Spin-orbit torque driven toggle mode MRAM with perpendicular magnetic anisotropy
Author Affiliations +
Abstract
Writing magnetic random-access memory (MRAM) by ultrafast and energy-efficient spin-orbit torque (SOT) has been impeded by the orthogonality between spin polarization and thermally stable perpendicular magnetic anisotropy (PMA). Previously proposed approaches to break this symmetry increase the fabrication complexity, are highly sensitive to the SOT current duration and magnitude, or increase the switching energy. To overcome these challenges, we exploit the precessional nature of the field-like SOT to propose a toggle PMA SOT-MRAM with simple structure that is controlled by a unidirectional SOT current. The proposed MRAM achieves field-free and energy-efficient switching that is robust to variations in the SOT current magnitude and duration with greater than 50% tolerance demonstrated through micromagnetic simulation. The deformation-free structure provides efficient data read-out and can be leveraged for directional writing through a simple XOR between the stored and incoming bits.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naimul Hassan , Susana P. Lainez-Garcia, Felipe Garcia-Sanchez, and Joseph S. Friedman "Spin-orbit torque driven toggle mode MRAM with perpendicular magnetic anisotropy", Proc. SPIE 11470, Spintronics XIII, 114701S (20 August 2020); https://doi.org/10.1117/12.2567453
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KEYWORDS
Magnetism

Anisotropy

Switching

Metals

Device simulation

Spin polarization

Tolerancing

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