High electrical conducting Si-doped Ga2O3 transparent oxide semiconductor by pulsed laser deposition

Hyung Min Jeon

doi:10.1117/12.2584820

5 March 2021 High electrical conducting Si-doped Ga₂O₃ transparent oxide semiconductor by pulsed laser deposition

Hyung Min Jeon

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 1168704 (2021) https://doi.org/10.1117/12.2584820
Event: SPIE OPTO, 2021, Online Only

Abstract

Highly conductive Si-doped epitaxial β-Ga2O3 films with a wide bandgap and high critical field strength were fabricated by pulsed laser deposition. The carrier concentration and Hall mobility are 4.06 × 1020 cm-3 and 58.7 cm2/Vs, respectively. Thus, overall conductivity has been calculated to be 3800 S/cm, which is the highest value ever reported based on β-Ga2O3 material. This degenerately doped layer will enhance the overall transistor performance through an ohmic regrowth process. Additionally, this opens up potential applications as a transparent conductive oxide layer due to coexistence of transparency and low resistivity (2.63 x10-4 Ω-cm) similar to commercial ITO.

Conference Presentation

Citation Download Citation

Hyung Min Jeon "High electrical conducting Si-doped Ga₂O₃ transparent oxide semiconductor by pulsed laser deposition", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 1168704 (5 March 2021); https://doi.org/10.1117/12.2584820

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