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5 March 2021 Band alignments and doping strategies in orthorhombic and monoclinic AlGO alloys
John L. Lyons, Darshana Wickramaratne, Joel B. Varley
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Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870R (2021) https://doi.org/10.1117/12.2588842
Event: SPIE OPTO, 2021, Online Only
Abstract
Gallium oxide has emerged as a promising ultrawide-bandgap semiconductor for electronic applications. Part of the attraction of Ga2O3 is its ability to be alloyed with other materials (such as Al2O3) for band-gap engineering or doped with other elements (such as silicon) for modifying its electrical conductivity. But what is still unknown is how these alloying capabilities extend into the orthorhombic phases, or how well the ultrawide-bandgap AlGO alloys can be n-type doped. Here hybrid density functional theory calculations are used to determine the electronic structure of AlGO alloys. Conduction-band offsets of AlGO alloys in the orthorhombic phase are calculated, as are donor ionization energies as a function of Al content. In light of these results, we discuss band engineering and doping strategies in AlGO alloys for electronic device applications.
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John L. Lyons, Darshana Wickramaratne, and Joel B. Varley "Band alignments and doping strategies in orthorhombic and monoclinic AlGO alloys", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870R (5 March 2021); https://doi.org/10.1117/12.2588842
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KEYWORDS
Aluminum
Doping
Germanium
Oxygen
Silicon
Tin
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