InGaN-delta-InN quantum wells on InGaN substrates for high-efficiency red emission

Bryan Melanson; Cheng Liu; Jing Zhang

doi:10.1117/12.2583125

5 March 2021 InGaN-delta-InN quantum wells on InGaN substrates for high-efficiency red emission

Bryan Melanson, Cheng Liu, Jing Zhang

Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 117060E (2021) https://doi.org/10.1117/12.2583125
Event: SPIE OPTO, 2021, Online Only

Abstract

Multi-color red, green, and blue (RGB) micro-light emitting diode (LED) displays often require the use different material systems to obtain high-efficiency RGB pixels. While blue and green micro-LEDs can be fabricated with sufficiently high external quantum efficiencies (ηEQE) using the InGaN materials system, red InGaN emitters currently exhibit much lower ηEQE. The reduction of InGaN LED efficiency at longer wavelengths can be attributed to the Quantum Confined Stark Effect (QCSE), which reduces the electron-hole wavefunction overlap (Γe_hh) and radiative recombination rate (𝑅_𝑠𝑝), and worsens at longer wavelengths with increasing QW In-content. Consequently, higher efficiency AlInGaP LEDs are usually used for the red pixels in micro-LEDs, complicating the fabrication process. In this work, InGaN-delta-InN quantum well (QW) LEDs with InGaN quantum barriers on InGaN substrates are shown to produce significant enhancement in electronhole wavefunction overlap and 𝑅_𝑠𝑝 over the entire red emission regime and into the near-infrared. Analysis and comparison of various InGaN-delta-InN QWs with InGaN barriers and InGaN/InGaN QWs emitting at 630 nm was performed using self-consistent six-band 𝑘 ∙ 𝑝 formalism. Wavefunction overlap from InGaN-delta-InN QWs was shown to increase by 3.5x when compared to an InGaN/InGaN QW at 630 nm. These improvements in wavefunction overlap were shown to lead to ~5 - 7x and ~3 - 10x enhancements in 𝑅_𝑠𝑝 and IQE, respectively. With growth of InN monolayers on InGaN now readily achievable, this novel delta-InN active region on InGaN substrate design could pave the way for high efficiency, native red-emitting InGaN LEDs and allow for monolithic fabrication of InGaN micro-LED displays.

Conference Presentation

Citation Download Citation

Bryan Melanson, Cheng Liu, and Jing Zhang "InGaN-delta-InN quantum wells on InGaN substrates for high-efficiency red emission", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060E (5 March 2021); https://doi.org/10.1117/12.2583125

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