Experimental stand of absorption measurements in the 8.6 - 9.5 GHz range for very thin samples with offset of the reflected wave phase

Constantin Huţanu

doi:10.1117/12.2571231

31 December 2020 Experimental stand of absorption measurements in the 8.6 - 9.5 GHz range for very thin samples with offset of the reflected wave phase

Constantin Huţanu

Author Affiliations +

Proceedings Volume 11718, Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies X; 117181T (2020) https://doi.org/10.1117/12.2571231
Event: Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies 2020, 2020, Online Only

Abstract

Most measurements in the microwave field using the variant estimation of the emergent progressive wave through very thin dielectric samples, do not take into account the existence of the reflected wave. Most of the times, in this variant, very absorbent elements are used in the final waveguide, so that the value of the reflected wave amplitude is very small so that the effect of the superposition on the progressive wave is negligible, in the position in detector probe is positioned. Measurements in this approximation are affected by errors, the larger the phase changer, between the progressive and the reflected wave, is bigger. The novelty of the method in this paper is the improvement of the accuracy of the measurements by absorption, using a phase shifter, so that the detected signal always represents the phase-free overlap of the emergent progressive wave with the reflected wave. The estimation of the real value of the detected signal is done by halving the value of the signal detected by the probe. Using this original concept of its own to ensure the compensation of the phase shift, I found that the accuracy of the measurements increased with a value between 2÷7%.

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Constantin Huţanu "Experimental stand of absorption measurements in the 8.6 - 9.5 GHz range for very thin samples with offset of the reflected wave phase", Proc. SPIE 11718, Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies X, 117181T (31 December 2020); https://doi.org/10.1117/12.2571231

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