Paper
19 March 1990 YBa2Cu3O7-x -YxPr1-xBa2Cu3 07-x Heterostructures for High Temperature Superconductive Electronics
C. T. Rogers, A. Inam, T. Venkatesan
Author Affiliations +
Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965174
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Many of the applications envisioned for the high temperature superconductors (HTSC) lie in the area of Josephson electronics, but realization of this technological promise requires a controllable multi-layer process which would admit the possibility of insulating layers, useful for applications from ground-plane isolation to tunnel-barrier formation, in combination with high quality superconducting or normal-conducting layers. We have begun investigating the growth and processing techniques necessary to realize these structures by studying a prototype multi-layer system based on Y Pr1-xBa2Cu307-x alloys. This class of materials is of great interest due to two facts: By varying the Pr concentration, x, the material's resistivity can be tuned. For x=0, we have pure YBa2Cu307-x (YBCO) which is a 90K superconductor; with increasing x, Tc decreases until at x =1 with pure PrBa2Cu307_ (PBCO) we find a divergent resistivity with decreasing T. Secondly, over the full alloy range, 0<x <1, the material remains orthorhombic in structure and is lattice matched to YBCO to a fraction of a percent. 1 Our major effort to date has been to study Josephson weak-link formation by using YBCO for electrodes and PBCO as a lattice-matched semiconducting barrier layer. 2 The first step is the growth of a heteroepitaxial four-layer structure of YBCO - PBCO YBCO - Au, using our standard laser deposition process. "All layers are grown during a single cycle of the vacuum system. We use Rutherford backscattering, both in the random and channeling modes, and X-ray scattering to verify layer stoichometry and heteroepitaxial growth of the orthorhombic perovskite structure, c-axis normal to the substrate. Both YBCO layers have sharp superconducting transitions above 80K upon removal from the vacuum system. Single devices with areas, A, from 2.5x10-5cm2 to 2x10-7crn2 are isolated with a four-step fabrication procedure involving standard photolithography and Ar ion milling. These devices show Current-Voltage characteristics similar to those observed for low temperature Superconductor /Normal metal /Superconductor (SNS) devices. We find good scaling of the critical currents. I. with A and scaling of the resistances, R7, with 1/A; the typical values of the /c.R7 product of 3.5rnV are consistent with traditional SNS behavior. Further, we observe Shapiro steps in response to 100GHz mm-wave radiation and oscillation of the d.c. supercurrent in a transverse magnetic field thus demonstrating that both the a.c. and d.c. Josephson effect occurs in these devices. These preliminary results suggest that our multi-layer process can be optimized for a variety of Josephson devices essential in producing electronic circuitry from the HTSC systems.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. T. Rogers, A. Inam, and T. Venkatesan "YBa2Cu3O7-x -YxPr1-xBa2Cu3 07-x Heterostructures for High Temperature Superconductive Electronics", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965174
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Superconductors

Electronics

Heterojunctions

Copper

Dielectrics

Electrodes

Gold

Back to Top