Presentation + Paper
4 March 2022 Towards voltage-tunable wavelength-agile 2D material-based light-emitting transistors (2D-LETs)
Carlos M. Torres Jr., Brad C. Liu, James R. Adleman, Richard C. Ordonez, Cody K. Hayashi, Teresa Emery-Adleman, Ryan P. Lu
Author Affiliations +
Abstract
We present on our progress in the design, fabrication, and characterization of light-emitting transistors based on twodimensional materials (2D-LETs) and top-gate dielectrics that enable voltage-controlled wavelength-agile light emission spanning from the visible (VIS) to the near-infrared (NIR) spectrum at room temperature. Monolayer transition metal dichalcogenide (TMD) devices (e.g. MoS2, MoSe2, WS2, WSe2) emit in the VIS-NIR range with respect to their direct bandgaps. The wavelength of the light emission from the TMD devices may be tuned to the NIR by reducing their direct bandgaps via the giant Stark Effect.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carlos M. Torres Jr., Brad C. Liu, James R. Adleman, Richard C. Ordonez, Cody K. Hayashi, Teresa Emery-Adleman, and Ryan P. Lu "Towards voltage-tunable wavelength-agile 2D material-based light-emitting transistors (2D-LETs)", Proc. SPIE 11990, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2022, 1199003 (4 March 2022); https://doi.org/10.1117/12.2615461
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KEYWORDS
Chemical vapor deposition

Graphene

Liquids

Semiconductors

Dielectrics

Luminescence

Transistors

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