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In this paper, we consider a method for constructing MEMS structures using a self-assembly operation based on controlled self-organization of mechanically stressed semiconductor layers. This work describes the design of highly sensitive tunneling linear acceleration sensors, as well as a nanoelectromechanical switch with two tunnel contacts. Accelerometers of this type have important advantages: hypersensitivity due to the tunnel effect, small dimensions compared to capacitive accelerometers, design flexibility due to wide construction variations depending on requirements, potential possibility of manufacturing structures with three axes of sensitivity in a single technological production cycle, high manufacturability. Tunneling nanoelectromechanical switches also have several advantages: such as low leakage current, energy efficiency, stability, good dynamic characteristics, and can be used in ultra-low-power electronics.
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