Paper
30 January 2022 Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system
Author Affiliations +
Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121571H (2022) https://doi.org/10.1117/12.2624575
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation
Abstract
This paper presents results achieved in thin films deposition of hafnium oxide by using the Russian system “Izofaz TM 200-01” developed by the Research Institute of Precision Machine Manufacturing. Tetrakis(ethylmethylamino)hafnium(IV) (TEMAH) and oxygen plasma were used as precursors for atomic layer deposition. Thin films with various thicknesses (100-300 Å) of high uniformity and overall quality were obtained.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey S. Zyuzin, Yason G. Zasseev, Askar A. Rezvanov, Vitaliy V. Panin, Vladimir A. Gvozdev, and Yevgeniy S. Gornev "Atomic layer deposition of thin films of hafnium oxide using Izofaz TM 200-01 system", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121571H (30 January 2022); https://doi.org/10.1117/12.2624575
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KEYWORDS
Atomic layer deposition

Semiconducting wafers

Oxides

Plasma

Thin film deposition

Thin films

Oxygen

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