Research progress on preparation technology and application of near-infrared silicon-based materials

Weiying Hu; Xiumin Xie; Qiang Xu; Shuai Huang; Jian Chen; Ruomei Jiang; Wei Zhang; Haizhi Song

doi:10.1117/12.2617898

15 February 2022 Research progress on preparation technology and application of near-infrared silicon-based materials

Weiying Hu, Xiumin Xie, Qiang Xu, Shuai Huang, Jian Chen, Ruomei Jiang, Wei Zhang, Haizhi Song

Proceedings Volume 12166, Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021); 121666V (2022) https://doi.org/10.1117/12.2617898
Event: Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021), 2021, Hong Kong, Hong Kong

Abstract

This paper summarizes the research progress of SiGe preparation technology at home and abroad, summarizes the advantages and disadvantages of low-voltage silicon epitaxy and molecular beam epitaxy, and discusses the applications of SiGe Heterojunction materials in pin, APD and waveguide laser detectors. Based on the development of black silicon preparation technology at home and abroad, femtosecond laser, wet etching and dry etching are discussed, and their applications in laser detectors are reviewed. Finally, the development prospects of the two materials and their application prospects are summarized and prospected, and the follow-up development direction is given.

Citation Download Citation

Weiying Hu, Xiumin Xie, Qiang Xu, Shuai Huang, Jian Chen, Ruomei Jiang, Wei Zhang, and Haizhi Song "Research progress on preparation technology and application of near-infrared silicon-based materials", Proc. SPIE 12166, Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021), 121666V (15 February 2022); https://doi.org/10.1117/12.2617898

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