Investigation of excess noise factor of InGaAs/InP SWIR APDs by direct power method

Zaibo Li; Zepeng Hou; Haifeng Ye; Runyu Huang; Chen Liu; Weilin Zhao; Xu Ma; Yunxue Li; Wei Wang; Jiaxing Zhang; Yanli Shi

doi:10.1117/12.2623732

27 March 2022 Investigation of excess noise factor of InGaAs/InP SWIR APDs by direct power method

Zaibo Li, Zepeng Hou, Haifeng Ye, Runyu Huang, Chen Liu, Weilin Zhao, Xu Ma, Yunxue Li, Wei Wang, Jiaxing Zhang, Yanli Shi

Author Affiliations +

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 121693F (2022) https://doi.org/10.1117/12.2623732
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

Avalanche photodiodes (APDs) have been widely used in optical communications, radar imaging and single photon detection fields, etc.. Compared with PIN photodiodes, the internal gain of APDs provide higher sensitivity and signal-to-noise ratio. The APDs gain come from the collision ionization of carriers, which is a random process and causes excess noise in the APDs, therefore, study of the excess noise factor of the detectors is of great significance to the performance improvement of APDs. This paper uses the direct power method to test the excess noise voltage spectral density of the InGaAs/InP APD, uses the source meter to measure the light and dark currents to calculate the gain. The relative intensity noise of the laser and the system impedance are calculated by linear fitting. The effect of measurement temperature and optical power on excess noise factor is investigated and discussed.

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Zaibo Li, Zepeng Hou, Haifeng Ye, Runyu Huang, Chen Liu, Weilin Zhao, Xu Ma, Yunxue Li, Wei Wang, Jiaxing Zhang, and Yanli Shi "Investigation of excess noise factor of InGaAs/InP SWIR APDs by direct power method", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 121693F (27 March 2022); https://doi.org/10.1117/12.2623732

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KEYWORDS

Avalanche photodetectors

Ionization

Interference (communication)

Temperature metrology

Avalanche photodiodes

Laser optics

Short wave infrared radiation

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