Influence of waveguide structure on the optical and electrical properties of high-power semiconductor lasers

Tao Lin; Yan Mu; Yue Qi; Jianan Xie; Wanjun Sun; Yaning Li; Zekun Ma; Rongjin Zhao; Ying Ding

doi:10.1117/12.2626404

27 March 2022 Influence of waveguide structure on the optical and electrical properties of high-power semiconductor lasers

Tao Lin, Yan Mu, Yue Qi, Jianan Xie, Wanjun Sun, Yaning Li, Zekun Ma, Rongjin Zhao, Ying Ding

Author Affiliations +

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 12169B0 (2022) https://doi.org/10.1117/12.2626404
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

To increase the catastrophic optical damage (COD) power of high-power semiconductor lasers, two 808 nm semiconductor lasers with different waveguide structures were fabricated. The calculation results show that the optical confinement factor of the large optical cavity structure (structure A) and the super large cavity structure (structure B) are 0.742% and 0.636%, and the maximum output power is 29.5 W and 34.4 W. The experimental results show that the large optical cavity structure (structure A) reaches a maximum output power of 22.08 W at a current of 22 A; the super large cavity structure (structure B) reaches a maximum output power of 7.2 W at a current of 12 A and reaches a thermal saturation when the current continues to increase. The experimental results obtained show that the maximum output power is low for the ultra-large cavity structure (Structure B). The low Al component of the waveguide layer leads to severe carrier leakage, which increases the series resistance and further reduces the output power of the device.

Citation Download Citation

Tao Lin, Yan Mu, Yue Qi, Jianan Xie, Wanjun Sun, Yaning Li, Zekun Ma, Rongjin Zhao, and Ying Ding "Influence of waveguide structure on the optical and electrical properties of high-power semiconductor lasers", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 12169B0 (27 March 2022); https://doi.org/10.1117/12.2626404

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