Presentation + Paper
15 March 2023 Epitaxially re-grown quantum dot-based photonic crystal surface emitting laser
Aye S. M. Kyaw, Ben C. King, Adam F. McKenzie, Neil D. Gerrard, Zijun Bian, Daehyun Kim, Jingzhao Liu, Xingyu Zhao, Kenichi Nishi, Keizo Takemasa, Mitsuru Sugawara, I. M. Butler, David T. D. Childs, Calum H. Hill, Richard J. E. Taylor, Richard A. Hogg
Author Affiliations +
Abstract
We report epitaxially regrown Photonic Crystal Surface-Emitting Lasers (PCSELs) utilizing self-assembled InAs quantum dots (QDs) exhibiting lasing at room temperature. The ability to utilize both the ground-state (GS) and excited-state (ES) of the QDs allows multiple emission wavelengths from one heterostructure. The choice of the grating periods of the photonic crystal allows lasing from neighbouring devices at the GS (~1230 nm) or ES (~1140 nm) of the QDs, 90 nm apart in wavelength. The threshold current densities are 0.69 kA/cm2 and 1.05 kA/cm2 for GS and ES respectively. The effect of PC structures, specifically etch depth of the PC on lasing performance is also discussed.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aye S. M. Kyaw, Ben C. King, Adam F. McKenzie, Neil D. Gerrard, Zijun Bian, Daehyun Kim, Jingzhao Liu, Xingyu Zhao, Kenichi Nishi, Keizo Takemasa, Mitsuru Sugawara, I. M. Butler, David T. D. Childs, Calum H. Hill, Richard J. E. Taylor, and Richard A. Hogg "Epitaxially re-grown quantum dot-based photonic crystal surface emitting laser", Proc. SPIE 12440, Novel In-Plane Semiconductor Lasers XXII, 124400F (15 March 2023); https://doi.org/10.1117/12.2649087
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KEYWORDS
Etching

Photonic crystals

Gallium arsenide

Laser crystals

Semiconductor lasers

Lithium

Emission wavelengths

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