Aye S. M. Kyaw,1 Ben C. King,1 Adam F. McKenziehttps://orcid.org/0000-0001-5246-151X,1 Neil D. Gerrard,2 Zijun Bian,1 Daehyun Kim,1 Jingzhao Liu,1 Xingyu Zhao,1 Kenichi Nishi,3 Keizo Takemasa,3 Mitsuru Sugawara,3 I. M. Butler,4 David T. D. Childs,5 Calum H. Hill,5 Richard J. E. Taylor,5 Richard A. Hogg1,5
1Univ. of Glasgow (United Kingdom) 2III-V Epi Ltd. (United Kingdom) 3QD Laser, Inc. (Japan) 4Defence Science and Technology Lab. (United Kingdom) 5Vector Photonics Ltd. (United Kingdom)
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We report epitaxially regrown Photonic Crystal Surface-Emitting Lasers (PCSELs) utilizing self-assembled InAs quantum dots (QDs) exhibiting lasing at room temperature. The ability to utilize both the ground-state (GS) and excited-state (ES) of the QDs allows multiple emission wavelengths from one heterostructure. The choice of the grating periods of the photonic crystal allows lasing from neighbouring devices at the GS (~1230 nm) or ES (~1140 nm) of the QDs, 90 nm apart in wavelength. The threshold current densities are 0.69 kA/cm2 and 1.05 kA/cm2 for GS and ES respectively. The effect of PC structures, specifically etch depth of the PC on lasing performance is also discussed.
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Aye S. M. Kyaw, Ben C. King, Adam F. McKenzie, Neil D. Gerrard, Zijun Bian, Daehyun Kim, Jingzhao Liu, Xingyu Zhao, Kenichi Nishi, Keizo Takemasa, Mitsuru Sugawara, I. M. Butler, David T. D. Childs, Calum H. Hill, Richard J. E. Taylor, Richard A. Hogg, "Epitaxially re-grown quantum dot-based photonic crystal surface emitting laser," Proc. SPIE 12440, Novel In-Plane Semiconductor Lasers XXII, 124400F (15 March 2023); https://doi.org/10.1117/12.2649087