Characterization and modeling of the BSI SPAD in 55nm CMOS process

Yang Liu; Yihan Zhao; Zhangming Zhu

doi:10.1117/12.2642845

23 January 2023 Characterization and modeling of the BSI SPAD in 55nm CMOS process

Yang Liu, Yihan Zhao, Zhangming Zhu

Proceedings Volume 12556, AOPC 2022: Optoelectronics and Nanophotonics; 1255607 (2023) https://doi.org/10.1117/12.2642845
Event: Applied Optics and Photonics China 2022 (AOPC2022), 2022, Beijing, China

Abstract

Single photon avalanche diodes based on the state-of-the-art CMOS fabrication nodes have inspired a new era of low cost and high integration quantum-level image sensors. They have a broad application prospect in biology, chemistry, medicine, and many other fields of science and engineering. For each application, the diodes’ structure and size must be optimized empirically, while the device performance is difficult to predict theoretically. To assist in this iterative design process, this paper simulates the single photon avalanche diodes’ structures by Sentaurus-TCAD to optimize the electrical and optical performance. A new modeling method of PDP is proposed. The designed and manufactured SPADs have good performance.

Citation Download Citation

Yang Liu, Yihan Zhao, and Zhangming Zhu "Characterization and modeling of the BSI SPAD in 55nm CMOS process", Proc. SPIE 12556, AOPC 2022: Optoelectronics and Nanophotonics, 1255607 (23 January 2023); https://doi.org/10.1117/12.2642845

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