Presentation + Paper
8 March 2024 Development of highly efficient blue and green edge-emitting laser diodes
Author Affiliations +
Abstract
This report shows the latest developments of Gallium nitride (GaN)-based blue (455nm) and green (525nm) edge-emitting laser diodes (LDs). The epitaxial layers were grown on c-plane free-standing GaN substrates by metal-organic chemical vapor deposition (MOCVD), and a ridge-type structure for refractive-index waveguide was fabricated. Each LD chip was mounted on a heat sink in a TO-Φ9 mm CAN package by a junction down method for improving thermal dissipation. Optimization of epitaxial layers and device structures has led to improve the wall-plug efficiency (WPE) of LDs. The WPE and the optical output power of the blue LD have reached to 52.4% and 5.99 W at the current of 3.0 A under continuous wave (CW) operation, respectively. We also confirmed that the WPE and the optical output power of the green LD were 24.2 % and 1.90 W at the CW current of 1.9 A, respectively. Each WPE is the highest value ever reported of blue and green LDs. On top of this, the lifetime tests of both LDs over 1000 hours indicate the long lifetime more than 30,000 hours defined by the time when an optical output power is expected to be lower than the half of initial value.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Katsuhiro Kishimoto, Tsuyoshi Hirao, Tomonori Morizumi, Yoji Nagao, Yoshitaka Nakatsu, Tomoya Yanamoto, and Shin-ichi Nagahama "Development of highly efficient blue and green edge-emitting laser diodes", Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX, 1288609 (8 March 2024); https://doi.org/10.1117/12.2692586
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KEYWORDS
Continuous wave operation

Semiconductor lasers

Gallium nitride

Light sources

Metalorganic chemical vapor deposition

Reliability

RGB color model

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