Paper
6 November 2023 Cryogenic characterization and parameter extraction of MOSFET for infrared detector ROIC
Junli Han, Fuhao Liu, Xiangyang Li
Author Affiliations +
Proceedings Volume 12921, Third International Computing Imaging Conference (CITA 2023); 129212I (2023) https://doi.org/10.1117/12.2690469
Event: Third International Computing Imaging Conference (CITA 2023), 2023, Sydney, Australia
Abstract
The infrared detector readout circuit operates at cryogenic temperature. Due to freeze-out effect and kink effect, the properties of CMOS devices will change at cryogenic temperature. Some works have studied the static operating characteristics of CMOS at cryogenic temperature. However, previous studies are most above 50K. In this paper, CMOS devices fabricated by SMIC 0.18 um technology are measured and characterized electrically over the temperature range from 8.5 K to 300 K. Based on the measurements, the reasons for the changes in threshold voltage and freeze-out effect is analyzed from the perspective of physical mechanism. The low RMS error (RMS error is reduced to less than 6%) is obtained by modifying the parameters of the device at various temperatures, and parameter library is established. In this work, a method to obtain low Root-Mean-Square (RMS) error is proposed, which is applied to temperatures ranging from 8.5 K to 300 K. The model simulation results fit well with the output and transfer characteristic curves of the designed MOSFET. This work obtains a cryogenic temperature model parameter library suitable for our designed CMOS readout circuit and provides device model guidance for subsequent complex circuit structure design such as cryogenic temperature CTIA.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junli Han, Fuhao Liu, and Xiangyang Li "Cryogenic characterization and parameter extraction of MOSFET for infrared detector ROIC", Proc. SPIE 12921, Third International Computing Imaging Conference (CITA 2023), 129212I (6 November 2023); https://doi.org/10.1117/12.2690469
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KEYWORDS
Cryogenics

Field effect transistors

Infrared detectors

CMOS devices

Design and modelling

Readout integrated circuits

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