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18 March 2024 Study on total dose radiation effect of γ rays on β-Ga2O3 SBD
WeiLi Fu, Teng Ma, XiangLi Zhong, ZhiFeng Lei, JinBin Wang, HongJia Song, Tao Xiao, Hong Zhang, Chao Peng, ZhanGang Zhang
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Proceedings Volume 13104, Advanced Fiber Laser Conference (AFL2023); 131040S (2024) https://doi.org/10.1117/12.3021472
Event: Advanced Fiber Laser Conference (AFL2023), 2023, Shenzhen, China
Abstract
Gallium oxide Ga2O3 has recently gained attention as a new power electronics semiconductor for aerospace applications. β-Ga2O3 has an extremely high bandgap energy of 4.8-4.9 eV and an expected high breakdown field of 8 MV/cm, which exceed those of traditional wide-bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN). These qualities make β-Ga2O3 a favorable choice for micro high-power and high-frequency devices. It is important to consider device application in a radiation environment. Due to its wide bandgap and high breakdown field, β- Ga2O3 has significant potential for use in Schottky barrier diodes (SBDs) in environments with extremely high radiation. In the radiation environment of space, it is crucial to contemplate the dependability of semiconductor devices in radiation, as alpha particles, gamma rays, heavy ions, X-rays, and other factors could induce single event effects, total ionizing dose effects, and displacement damage effects on semiconductor devices in spacecraft. Therefore, the impact of gamma-ray radiation with a total dose was analyzed on a new SBD device which can tolerate 650 V. The results indicate that radiation has a minor impact on the diode's forward performance. Conversely, the device's reverse electrical properties are significantly impacted by radiation. In addition, we examined the internal physical mechanism of diode performance deterioration triggered by gamma-ray radiation utilizing the outcomes of β-Ga2O3 Schottky diode radiation testing and analysis. To characterize the radiation tolerance of this material, studies on irradiation damage are required.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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WeiLi Fu, Teng Ma, XiangLi Zhong, ZhiFeng Lei, JinBin Wang, HongJia Song, Tao Xiao, Hong Zhang, Chao Peng, and ZhanGang Zhang "Study on total dose radiation effect of γ rays on β-Ga2O3 SBD", Proc. SPIE 13104, Advanced Fiber Laser Conference (AFL2023), 131040S (18 March 2024); https://doi.org/10.1117/12.3021472
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KEYWORDS
Diodes
Interfaces
Gamma radiation
Ionizing radiation
Spectral density
Electrical properties
Radiation effects
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