Multi-gain stage avalanche photodiode based on InGaAs/InAlAs superlattice

Xiao Li; Xin Hao; Hai Zhi Song; Xiu Min Xie; Yan Li Zhao; Yan Li Shi; Liu Yuan; Xu Pan; Qian Dai; Wen Zhi Qin; Jie Deng; Jian Chen; Zun Gui Ke; Jing Tong; Fan Lin Kong

doi:10.1117/12.3018612

30 April 2024 Multi-gain stage avalanche photodiode based on InGaAs/InAlAs superlattice

Xiao Li, Xin Hao, Hai Zhi Song, Xiu Min Xie, Yan Li Zhao, Yan Li Shi, Liu Yuan, Xu Pan, Qian Dai, Wen Zhi Qin, Jie Deng, Jian Chen, Zun Gui Ke, Jing Tong, Fan Lin Kong

Author Affiliations +

Proceedings Volume 13154, Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Detector Technologies; 131540F (2024) https://doi.org/10.1117/12.3018612
Event: Sixth Conference on Frontiers in Optical Imaging Technology and Applications (FOI2023), 2023, Nanjing, JS, China

Abstract

This article reports a multi-gain-stage avalanche photodiode based on InGaAs/InAlAs superlattice, which has much higher gain and signal-to-noise ratio than conventional APD. The physical mechanism of high gain and low noise of this type of APD is analyzed in detail, and the dead space gain theory (DSMT) is introduced and applied to the calculation of the excess noise factor of multi-gain-stage APD. For a 5-stage device, the distribution of electric field and carrier dead space is calculated, and the ionization rates before and after considering phonon scattering are compared. The gain vs excess noise factor curve is obtained and compared with the traditional McIntyre model. The simulation results shows that the excess noise factor is equivalent to the McIntyre model k=0.049. Based on the simulation results, an optimized epitaxial material structure is designed, Front-illuminated photo diode were etched in the molecular beam epitaxy (MBE)-grown epitaxial material, the mesa sidewalls were encapsulated with Si₃N₄ . The test results of a 50μm diameter device are as follows: maximum above 1000, excess noise factor of 2.39@M=100, spectral response range of 0.95~1.65μm, response time of 1.26ns.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Xiao Li, Xin Hao, Hai Zhi Song, Xiu Min Xie, Yan Li Zhao, Yan Li Shi, Liu Yuan, Xu Pan, Qian Dai, Wen Zhi Qin, Jie Deng, Jian Chen, Zun Gui Ke, Jing Tong, and Fan Lin Kong "Multi-gain stage avalanche photodiode based on InGaAs/InAlAs superlattice", Proc. SPIE 13154, Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Detector Technologies, 131540F (30 April 2024); https://doi.org/10.1117/12.3018612

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KEYWORDS

Ionization

Avalanche photodetectors

Electrons

Electric fields

Spectral response

Superlattices

Phonons

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