Improved wafer temperature measurements

David W. Voorhes; Deirdre M. Hall

doi:10.1117/12.56663

1 February 1992 Improved wafer temperature measurements

David W. Voorhes, Deirdre M. Hall

Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56663
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Fast and accurate non-contacting temperature measurements are possible with a new approach which offers significant advantages over optical pyrometry. By using laser extensometry to measure in-plane thermal expansion, the temperature of silicon wafers can be determined during rapid thermal processing to better than 0.5 °C accuracy from room temperature to more than 1300 °C. This approach is entirely non-contacting and works on wafer surfaces exactly as they are, with no need for calibration procedures or emissivity determinations. Its 0 1 °C resolution and rapid response make it well-suited for dosed loop control of rapid thermal processing. In addition, this measurement concept lends itself well to compact packaging at low cost.

Citation Download Citation

David W. Voorhes and Deirdre M. Hall "Improved wafer temperature measurements", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56663

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