Practical evaluation of 16M-DRAMs production with i-line phase-shift lithography

Akihiro Usujima; Ryuji Tazume; Tatsuji Araya; Yoshimi Shioya; Kazumasa Shigematsu

doi:10.1117/12.136041

9 July 1992 Practical evaluation of 16M-DRAMs production with i-line phase-shift lithography

Akihiro Usujima, Ryuji Tazume, Tatsuji Araya, Yoshimi Shioya, Kazumasa Shigematsu

Proceedings Volume 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II; (1992) https://doi.org/10.1117/12.136041
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

We have fabricated 16M-DRAMs with i-line phase-shift lithography using 8 inch wafers. Edge-contrast enhancement type was used as a phase-shift reticle. The effects on i-line phase- shift lithography were evaluated for the patterns which have a small focus and alignment margin. It was found that the phase-shift lithography has a large effect on enlarging focus margin of small size patterns like 0.5 micrometers . We evaluated the effect of phase-shift lithography by a trial manufacturing of 16M-DRAMs. As a result, i-line phase-shift lithography was found to have a possibility of high yield production of 16M-DRAMs. However, it was also found that there were several rejected pattern widths which were caused by variation of shifter width in the phase-shift reticle. So it is necessary to improve these rejected patterns for the application of this method to 16M-DRAMs.

Citation Download Citation

Akihiro Usujima, Ryuji Tazume, Tatsuji Araya, Yoshimi Shioya, and Kazumasa Shigematsu "Practical evaluation of 16M-DRAMs production with i-line phase-shift lithography", Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); https://doi.org/10.1117/12.136041

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KEYWORDS

Reticles

Phase shifts

Lithography

Semiconducting wafers

Optical alignment

Photoresist processing

Etching

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