High-speed InP-based HBT integrated circuits

Joe E. Jensen; William E. Stanchina; Robert A. Metzger; M. E. Hafizi; Ting-Ping Liu; David B. Rensch

doi:10.1117/12.142553

3 September 1992 High-speed InP-based HBT integrated circuits

Joe E. Jensen, William E. Stanchina, Robert A. Metzger, M. E. Hafizi, Ting-Ping Liu, David B. Rensch

Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.142553
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

This paper describes the progress of AlInAs/GaInAs HBT devices and ICs. A cutoff frequency (f_T) and a maximum frequency of oscillation of 130 GHz and 91 GHz, respectively, have been achieved with graded base-emitter junctions. A divide-by-four circuit clocked at 39.5 GHz, an 8/9 dual modulus divider consisting of 128 transistors clocked at 9 GHz, a broad band amplifier with 8 dB gain and 33 GHz bandwidth, and a dc-to-16-GHz Gilbert Gain Cell active mixer will be described.

Citation Download Citation

Joe E. Jensen, William E. Stanchina, Robert A. Metzger, M. E. Hafizi, Ting-Ping Liu, and David B. Rensch "High-speed InP-based HBT integrated circuits", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.142553

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